Silicon carbide was discovered as early as 1842, but it was not until 1955 that a method was developed to produce high-quality silicon carbide crystalline materials. Silicon carbide has become the forefront and commanding heights of the global semiconductor industry. As an emerging strategic leading industry, it is the key basic material for the development of the third generation semiconductor industry.

Silicon carbide semiconductor, it has the advantages of high thermal conductivity, small mismatch with GaN lattice, suitable for the new generation of light emitting diode (LED) substrate material, high power electronic materials.

In addition to being used as LED substrate, silicon carbide can also manufacture high-voltage, high-power power electronic devices, such as Schottky diodes, insulated gate bipolar transistors, metal-oxide semiconductor field effect transistors, etc., used in smart grid, solar grid, electric vehicles and other industries.